1/7 esda6v1s3 esda6v2s6 ? october 2003 - ed: 3a transil array for esd protection so-20 esda6v1s3 where transient overvoltage protection in esd sensitive equipment is required, such as : - computers - printers - communication systems - gsm handsets and accessories - other telephone sets applications application specific discretes a.s.d.? functional diagram ssop20 esda6v2s6 benefits high esd protection level : up to 25 kv high integration suitable for high density boards iec 1000-4-2 : level 4 mil std 883c-method 3015-6 : class3 (human body model) complies with the following standards : n 18 unidirectional transil functions n low leakage current: i r max. < 2 m a n 200 w peak pulse power (8/20 m s) features descrition the esda6xxsx is a monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against esd. it clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients.
esda6v1s3 / esda6v2s6 2/7 symbol parameter v rm stand-off voltage v br breakdown voltage v cl clamping voltage i rm leakage current i pp peak pulse current a t voltage temperature coefficient c capacitance rd dynamic resistance v f forward voltage drop electrical characteristics (t amb = 25c) symbol parameter value unit v pp electrostatic discharge mil std 883c - method 3015-6 25 kv p pp peak pulse power (8/20 m s) 200 w t stg t j storage temperature range maximum junction temperature -55to+150 150 c c t l maximum lead temperature for soldering during 10s 260 c absolute maximum ratings (t amb = 25c) types v br @i r i rm @v rm rd a tc v f @i f min. max. max. typ. max. typ. max. note1 note1 note 2 note 3 0v bias vvma m av w 10 -4 / cpf v ma esda6v1s3 6.1 7.2 1 2 5.25 0.5 6 120 1.25 200 esda6v2s6 6.2 7.2 1 2 5.25 0.5 6 100 1.25 200 note 1 : between any i/o pin and ground note 2 : square pulse, i pp = 25a for esda6v1s3 and i pp = 15a for esda6v2s6 , t p = 2.5 m s note 3 : d v br = a t*[t amb -25] * v br (25c)
esda6v1s3 / esda6v2s6 3/7 the esda family has been designed to clamp fast spikes like esd. generally the pcb designers need to calculate easily the clamping voltage v cl . this is why we give the dynamic resistance in addition to the classical parameters. the voltage across the protection cell can be calculated with the following formula: v cl =v br +rdi pp where ipp is the peak current through the esda cell. dynamic resistance measurement the short duration of the esd has led us to prefer a more adapted test wave, as below defined, to the classical 8/20 m s and 10/1000 m s surges. 2.5 m s duration measurement wave. as the value of the dynamic resistance remains stable for a surge duration lower than 20 m s, the 2.5 m s rectangular surge is well adapted. in addition both rise and fall times are optimized to avoid any parasitic phenomenon during the measurement of rd. calculation of the clamping voltage use of the dynamic resistance 2s tp = 2.5s t i ipp
esda6v1s3 / esda6v2s6 4/7 110100 10 100 1000 2000 ppp(w) tp(s) fig. 2 : peak pulse power versus exponential pulse duration (tj initial = 25 c). 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 ppp[tj initial]/pp[tj initial=25c] tj initial(c) fig. 1 : peak power dissipation versus initial junction temperature. 12 510 10 20 50 100 c(pf) f=1mhz vosc=30mv v (v) r fig. 4 : capacitance versus reverse applied voltage (typical values). 4 6 8 101214161820222426283032 0.1 1.0 10.0 50.0 ipp(a) tp=2.5s v (v) cl fig. 3 : clamping voltage versus peak pulse current (tj initial = 25 c). rectangular waveform tp = 2.5 m s. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.01 0.10 1.00 5.00 i (a) fm tj=25c v (v) fm fig. 6 : peak forward voltage drop versus peak forward current (typical values). 25 50 75 100 125 1 10 100 200 i [tj] / i [tj=25c] rr tj(c) fig. 5 : relative variation of leakage current versus junction temperature (typical values).
esda6v1s3 / esda6v2s6 5/7 d1 d2 dn 0 to 5 v 0 to 5 v 0 to 5 v application example : 1 - protection of logic-level signals. (ex : centronics junction) a1 +/- 2.5 v a2 +/- 2. 5 v a16 +/- 2.5 v 2 - protection of symmetrical signals. note : capacitance value between any i/o pin and ground is divided by 2. implementing its asd tm technology, stmicroelectronics has developed a monolithic transil diode array, which is a reliable protection against electrostatic overloads for computer i/o ports, modems, gsm handsets and accessories or other similar systems with data outputs. the esdaxxsx integrates 18 transil diodes in a compact package that can be easily mounted close to the circuitry to be protected, eliminating the assembly costs associated with the use of discrete diodes, and also increasing system reliability. each transil has a breakdown voltage between 6.2v (minimum) and 7.2v (maximum). when the input voltage is lower than the breakdown voltage, the diodes present a high impedance to ground. for short overvoltage pulses, the fast-acting diodes provide an almost instantaneous response, clamping the voltage to a safe level.
esda6v1s3 / esda6v2s6 6/7 type marking esda6v1s3 e6v1s3 esda6v2s6 esda6v2s6 packaging : preferred packaging is tape and reel. marking : logo, date code package mechanical data so-20 (plastic) k hx45 c l a a1 b e d eh ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.35 2.65 0.092 0.104 a1 0.10 0.20 0.004 0.008 b 0.33 0.51 0.013 0.020 c 0.23 0.32 0.009 0.013 d 12.6 13.0 0.484 0.512 e 7.40 7.60 0.291 0.299 e 1.27 0.050 h 10.0 10.65 0.394 0.419 h 0.25 0.75 0.010 0.029 l 0.50 1.27 0.020 0.050 k8 (max) order code esda 6v1 s3 rl esd array v br min package : 3 : so20 6 : ssop20 weight : 0.55g. packaging: rl = tape and reel = tube
esda6v1s3 / esda6v2s6 7/7 package mechanical data ssop20 (plastic) information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not au- thorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2003 stmicroelectronics - all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com l e k b e a 1 1 1 0 1 2 0 d e1 a 2 a 2 a1 c ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.00 0.079 a1 0.25 0.010 a2 1.51 2.00 0.059 0.079 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.10 0.35 0.004 0.014 d 7.05 8.05 0.278 0.317 e 7.60 8.70 0.299 0.343 e1 5.02 6.10 6.22 0.198 0.240 0.245 e 0.65 0.026 k 0 10 0 10 l 0.25 0.50 0.80 0.010 0.020 0.031 weight : 0.18g.
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